VLSI - Very Large Scale Integration MCQs (Chapterwise Multiple Choice Questions)

Which one of the following is a concurrent statement?

The main statement

The end statement

The process statement

The signal statement

Answer & Explanation

Correct Answer: The process statement

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LSI and VLSI devices use_____________ technology.

TTL

ECL

MOS

CMOS

Answer & Explanation

Correct Answer: MOS

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Photolithography in IC Fabrication is___________.

the deposition of oxide in selective areas

the selective removal of oxide in the desired areas

a process for ion implantation

a process for annealing

Answer & Explanation

Correct Answer: the selective removal of oxide in the desired areas

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We need only __________ to make a 2:1 MUX with a pass transistor logic.

14 transistors

7 transistors

6 transistors

5 transistors

Answer & Explanation

Correct Answer: 7 transistors

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If length (L) and width (W) are both scaled down by α, the area is scaled ___________. ron

down by α resistance

down by α2

up by α

None of these

Answer & Explanation

Correct Answer: None of these

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In the BiCMOS process, the basic inverter is made by __________.

using mos as switch and BJT as driver

using mos as driver and BJT as switch

using either of the two as driver or switch

None of these

Answer & Explanation

Correct Answer: using mos as switch and BJT as driver

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In VHDL,the order of the concurrent statements must be_________.

increasing(according to size)

decreasing (according to size)

both increasing and decreasing

None of the above

Answer & Explanation

Correct Answer: both increasing and decreasing

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Which one of the following has the lowest power dissipation?

MOS

bipolar

GaAs

CMOS

Answer & Explanation

Correct Answer: CMOS

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The two metal layers are laid in a way that ______________.

the conductors are always parallel

the conductors are always orthogonal

the conductors are always touching

None of the above

Answer & Explanation

Correct Answer: the conductors are always orthogonal

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Under what condition does the Frenkel defect take place?

A vacancy in the lattice created due to a missing atom

A silicon atom in an interstitial lattice site with an associated vacancy

A non silicon atom in an interstitial lattice site with an associated vacancy

A vacancy in the lattice created due to a missing molecule

Answer & Explanation

Correct Answer: A silicon atom in an interstitial lattice site with an associated vacancy

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