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Basic Semiconductors MCQ

1. When a transistor is driven to saturation, ideally, the Vce is _____.

VCC

VCC/2

2VCC

Answer

Correct Answer: 0

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2. Vacuum tubes are _____.

linear devices

non-linear devices

both linear and non-linear under different conditions

Answer

Correct Answer: non-linear devices

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3. Which of the following is used to provide current in vacuum tubes?

protons

ions

electrons

neutrons

Answer

Correct Answer: electrons

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4. Tuned amplifiers are used for the amplification of _____.

audio frequencies

very low frequencies

ery high frequencies

Answer

Correct Answer: RF

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5. What would be the gain of a negative feedback amplifier with an internal gain A=100 and a feedback factor m=0.9?

1.09

5.5

Answer

Correct Answer: 1.09

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6. Why is the control grid of a tube always held at negative potential W.R.T cathode.?

in order to avoid heating of the tube

in order to obtain faithful amplification

in order to set its operating point

None of the above

Answer

Correct Answer: in order to obtain faithful amplification

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7. The relationship among bandwidth, resonant frequency and Q of a tuned circuit is _____.

BW = Q/fr

BW = Q fr

BW = fr√Q

BW = fr/Q

Answer

Correct Answer: BW = fr/Q

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8. The resonant circuit has ___________ impedance at the resonant frequency.

a capacitive

an inductive

a resistive

Answer

Correct Answer: a resistive

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9. We have to match a 16-ohm speaker to an amplifier so that the effective load resistance is 10 KΩ. What should be the transformer turn ratio?

Np/Ns=50

Np/Ns=25

Np/Ns=75

Np/Ns=12.5

Answer

Correct Answer: Np/Ns=25

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10. Which coupling does the final stage of a multistage amplifier use?

direct

transformer

None of the above

Answer

Correct Answer: transformer

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11. The output frequency of a half-wave rectifier is _____.

double the input A.C frequency

half the input A.C frequency

equal to the input A.C frequency

None of the above

Answer

Correct Answer: equal to the input A.C frequency

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12. Which of the following parameters is a measure of a vacuum tube's amplification capability?

transresistance

impedance

conductance

transconductance

Answer

Correct Answer: transconductance

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13. The V-I characteristics of a triac in the first and third quadrants are essentially identical to those of _______ in the first quadrant

a transistor

a UJT

a zener diode

an SCR

Answer

Correct Answer: an SCR

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14. When a transistor has to act as a switch, it must operate in _____.

the active region

the cut-off region

the saturation region

both the cut off and the saturation regions

Answer

Correct Answer: both the cut off and the saturation regions

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15. The required gain of an amplifier for sustained oscillation in the wein bridge oscillator is _____.

A 2

A 1

A 3

None of the above

Answer

Correct Answer: A 3

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16. The Q-factor of a parallel tuned circuit is given by _____.

1/R√C/L

R√L/C

1/R√L/C

R√C/L

Answer

Correct Answer: 1/R√L/C

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17. The output characteristics of an FET closely resemble the plate characteristics of a________ valve.

diode

triode

tetrode

pentode

Answer

Correct Answer: pentode

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18. Which one of the following is a non-feedback type oscillator?

Wein bridge oscillator

Hartley oscillator

UJT relaxation oscillator

Colpitts oscillator

Answer

Correct Answer: UJT relaxation oscillator

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19. Tuned amplifiers are generally operated as

class A amplifiers

class B amplifiers

class AB amplifiers

class C amplifiesrs

Answer

Correct Answer: class C amplifiesrs

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20. The most commonly used semiconductor in solid state devices is _____.

germanium

carbon

silicon

phosphorus

Answer

Correct Answer: silicon

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21. Which of the following configurations of a transistor is preferred as an amplifier?

common-collector

common- base

common-emitter

None of the above

Answer

Correct Answer: common-emitter

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22. The overall gain of a multistage amplifier is 140. When negative feedback is applied, the gain is reduced to 17.5. The fraction of the output that is feedback to the input will be _____.

1/30

1/20

1/10

1/5

Answer

Correct Answer: 1/20

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23. Which of the following multivibrators is a square wave oscillator?

astable

monostable

bistable

None of above

Answer

Correct Answer: astable

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24. Which one of the following is Shockley's equation?

ID = IDSS [1-VGS/VP]2

IDSS = ID [1-VGS/VP]2

VP = IP [1-VGS/IDSS]2

VGS = VP [1-ID/IDSS]2

Answer

Correct Answer: ID = IDSS [1-VGS/VP]2

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25. Two identical germanium diodes are connected in series opposition. A 10V battery is impressed upon this series arrangement. What will be the voltage across each diode room temperature if the Zener breakdown voltage of each diode is 9.8V?

VD1= 0.2V , VD2 = 9.8V

VD1 = 10V , VD2 = 0V

VD1 = 0V , VD2 = 10V

VD1 = 9.8V , VD2 = 0.2V

Answer

Correct Answer: VD1= 0.2V , VD2 = 9.8V

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26. The range of LC oscillators is _____.

20 HZ to 100KHZ

10 HZ to 20 HZ

100KHZ to a few GHZ

Answer

Correct Answer: 100KHZ to a few GHZ

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27. Which device has the highest input impedance?

MOSFET

FET

BJT

SCR

Answer

Correct Answer: MOSFET

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28. The maximum value of AC voltage appearing across the secondary of a transformer in a bridge circuit using a vacuum tube is 400 v. The peak inverse voltage of the diode should be _____.

200 v

800 v

400 v

600 v

Answer

Correct Answer: 200 v

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29. Which of the following conditions must a transistor fulfill to act as an amplifier?

Base-emitter junction reverse biased and base-collector junction forward biased

Base-emitter junction forward biased and base-collector junction reverse biased

Emitter-collector junction forward biased and base- collector junction reverse biased

Base-collector junction forward biased and emitter-collector junction reverse biased

Answer

Correct Answer: Base-emitter junction forward biased and base-collector junction reverse biased

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30. Tuning is generally accomplished by varying _____.

L(inductor)

C(capacitor)

both L and C

R(resistor)

Answer

Correct Answer: both L and C

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31. The slope of the D.C load line of a transistor circuit having a collector load Rc is _____.

1/Rc

-1/Rc

2Rc

Answer

Correct Answer: -1/Rc

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32. The stability factor of a biasing circuit is 10. What does it mean?

Ic changes 10 times as munch as any change in Ico(leakage current)

Ib changes 10 times as much as any change in Ico

Ie change 10 times as munch as any change in Ico

Answer

Correct Answer: Ic changes 10 times as munch as any change in Ico(leakage current)

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33. If the A.C input to a half-wave rectifier has an R.M.S valve of 400/√2 v, the peak inverse voltage will be _____.

400 v

400√2 v

800√2 v

800/√2 v

Answer

Correct Answer: 400 v

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34. The ideal value of the stability factor is _____.

100

Answer

Correct Answer: 1

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35. A 3-ohm load is coupled to a transistor amplifier through a step-down transformer. If the D.C resistance of the primary winding is 300Ω and the output resistance of the amplifier is 3KΩ, what should be the turn ratio for the transfer of maximum power?

Np/Ns=40

Np/Ns=20

Np/Ns=30

Np/Ns=10

Answer

Correct Answer: Np/Ns=30

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36. The complementary MOS(CMOS) uses _____.

only n-channel devices in the circuit

only p- channel devices in the circuit

both n and p channel devices in the circuit

None of the above

Answer

Correct Answer: both n and p channel devices in the circuit

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37. An :FET is a _____.

bipolar device

tripolar device

unipolar device

Answer

Correct Answer: unipolar device

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38. An FET has ________ temperature co-efficient of resistance.

positive

negative

Answer

Correct Answer: negative

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39. The input and output voltages of a CE transistor amplifier are _____.

in phase

90° out of phase

180° out of phase

120° out of phase

Answer

Correct Answer: 180° out of phase

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40. If in a transistor VCB= 4V , VBE = 0.7V, the VCE will be equal to _____.

4.7v

5.4v

3.3v

0.7v

Answer

Correct Answer: 4.7v

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41. Hartley oscillator is _____.

an RC oscillator

an LC oscillator

a Crystal oscillator

Answer

Correct Answer: an LC oscillator

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42. An SCR combines the features of_____.

a rectifier and an amplifier

a rectifier and a transistor

a rectifier and an oscillator

a rectifier and an inverter

Answer

Correct Answer: a rectifier and a transistor

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43. A D.C milliammeter connected to a half-wave rectifier supplying a maximum current of 10mA will read _____.

10 mA

20 mA

5 mA

3.18 mA

Answer

Correct Answer: 3.18 mA

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44. A transistor amplifier has 4v,2mA as the operating point. For faithful amplification, the collector current due to signal alone should not exceed _____.

2mA

1mA

4mA

8mA

Answer

Correct Answer: 2mA

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45. The impedance of a parallel tuned circuit at resonance is _____.

low

very high

very low

Answer

Correct Answer: very high

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46. A reversed biased P-N junction has a resistance of the order of _____.

KΩ

MΩ

mΩ

Answer

Correct Answer: MΩ

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47. For an R-C phase shift oscillator , the frequency of oscillation will be given as _____.

fo = 1/2П√RC

fo = 1/2П√6RC

fo = 1/√2ПRC

fo = 2/√2ПRC

Answer

Correct Answer: fo = 1/2П√6RC

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48. For faithful amplification, VBE must not fall below _____.

0.9v for si transistors

0.5v for si transistors

0.3v for si transistors

0.7v for si transistors

Answer

Correct Answer: 0.7v for si transistors

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49. If the input to a differentiating circuit is a square wave, the output will be _____.

rectangular

spiked

triangular

sinusoidal

Answer

Correct Answer: spiked

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50. In an R-C phase shift oscillator, an R-C network is designed to introduce a phase shift of _____ .

300

600

900

1800

Answer

Correct Answer: 300

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51. If in a transistor , Ic = 9.5mA , Ie = 10mA , the value of α will be _____.

0.95

9.5

0.095

Answer

Correct Answer: 0.95

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52. If the input to an integrating circuit is a square wave, the output will be _____.

triangular

rectangular

saw-tooth

spiked

Answer

Correct Answer: triangular

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53. If the collector supply voltage is 10v, the collector cut off voltage under D.C conditions will be _____.

10v

20v

30v

Answer

Correct Answer: 10v

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54. The maximum efficiency of a full wave rectifier is _____.

40%

81.2%

90%

99%

Answer

Correct Answer: 81.2%

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55. In the d.c. equivalent circuit of a transistor amplifier , the capacitors are regarded as _____.

Open

Short

Sometimes open and sometimes short

Unchanged

Answer

Correct Answer: Open

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56. An SCR is a solid state equivalent of a _____.

triode

pentode

thyratron

diode

Answer

Correct Answer: thyratron

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57. At parallel resonance, a tuned circuit offers an impedance of _____.

C/LR

R/LC

L/CR

2L/CR

Answer

Correct Answer: L/CR

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58. A three-stage amplifier has a first-stage voltage gain of 100, a second stage voltage gain of 200 and a third stage gain of 400. The total voltage gain in db will be _____.

130 dB

140 dB

132 dB

138 dB

Answer

Correct Answer: 138 dB

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59. In the enhancement mode (MOSFET) , conductivity increases _____.

with the decrease in positive gate voltage

with the increase in positive gate voltage

with the decrease in negative gate voltage

with the increase in negative gate voltage

Answer

Correct Answer: with the increase in positive gate voltage

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60. In the collector feedback biasing, β = 57 , RC = 1 kΩ , IB = 60µA and VCB = 4.5V. The value of the stability factor will be _____.

30.4

32.9

4.5

Answer

Correct Answer: 32.9

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61. Radio frequencies have their range above _____.

20KHZ

50KHZ

100KHZ

200KHZ

Answer

Correct Answer: 200KHZ

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62. A varactor diode can function as a variable capacitor with a________ forward bias.

very slight

moderate

heavy

Answer

Correct Answer: very slight

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63. If a circuit of full-wave centre-tapped rectifier with capacitor filter employs a load RL = 100Ω, and C = 1050µF and the frequency is 50HZ , what would be the ripple factor?

40%

30%

22%

27%

Answer

Correct Answer: 27%

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64. A vacuum tube conducts current _____.

from the cathode to the anode

from the anode to the cathode

in both the above directions

alternately in both directions

Answer

Correct Answer: from the cathode to the anode

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65. An A.C supply of 230v is applied to a half wave rectifier circuit through a transformer of turn ratio 10:1. Its D.C voltage output will be _____.

12v

10.36v

5.18v

Answer

Correct Answer: 10.36v

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66. A triac can pass a portion of _____.

positive half-cycle through the load

negative half-cycle through the load

both positive and negative half-cycles through the load

None of the above

Answer

Correct Answer: both positive and negative half-cycles through the load

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67. If in a transistor IE = 10.5mA , IC = 10mA,the value of β will be _____.

0.2

200

100

Answer

Correct Answer: 20

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68. For good stabilization of the operating point in a voltage divider bias, the current I, flowing through potential dividers R1 and R2, should be equal to or greater than _____. (IB-base current)

2IB

10IB

4IB

IB/2

Answer

Correct Answer: 10IB

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69. An FET has the following parameters IDSS = 32mA , VGS ( off ) = -8V , VGS = -4.5V. What will be the drain current?

5.2 mA

6.12 mA

7.03 mA

7.45 mA

Answer

Correct Answer: 6.12 mA

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70. If the reverse bias on the gate of an FET is increased , the width of the conducting channel will _____.

increase

decrease

remain constant

Answer

Correct Answer: decrease

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71.
According to the Barkhausen criterion for oscillators_______.
A – open loop gain
β – feed back factor

Aβ < 1

Aβ > 1

Aβ = 1

Aβ ≤ 1

Answer

Correct Answer:

Aβ = 1

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72. A P-type material is _____.

positively charged

negatively charged

electrically neutral

none of the above

Answer

Correct Answer: electrically neutral

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73. Which particle generally carries the most momentum?

A photon

A phonon

Answer

Correct Answer: A phonon

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74. What causes particles to diffuse from regions of higher concentration to regions of lower concentration?

Electron density

Magnetic Orientation

Thermal Motion

Synthetic Osmosis

Answer

Correct Answer: Thermal Motion

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75. What is the name of the regime in which transistors pass current?

Accumulation

Conduction

Inversion

Depletion

Answer

Correct Answer: Inversion

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76. Which statement is true about the Zener Effect?

It liberates a large number of free majority carriers

None of these

It consists of electrical breakdown in a forward biased p-n diode

All of these

It occurs in heavily doped junctions

Answer

Correct Answer: It occurs in heavily doped junctions

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77. True or False? Pure Si has a low electrical resistivity at room temperature

True

False

Answer

Correct Answer: False

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78. What is the conventional unit of volume in semiconductor engineering?

nm^3

mm^3

m^3

cm^3

Answer

Correct Answer: cm^3

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79. In a plot of carrier concentration versus temperature, which of these is NOT a distinct region?

Extrinsic

Intrinsic

Freeze Out

Melt In

Answer

Correct Answer: Melt In

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80. A space on a wafer between die is called a(n):

Scribe line

Adhesive

Hexode

Mask

Answer

Correct Answer: Scribe line

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81. Which of these is a common method for producing single-crystal silicon?

Nickel-palladium crystal catalysis

Schottky crystalization

Czochralski process

Chemical vapor deposition

Answer

Correct Answer: Czochralski process

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82. What happens to electrons to cause a semiconductor to gain electric conductivity?

They have been delocalized.

They have been sped up.

They have been bombarded.

They are encircled by neutrinos.

Answer

Correct Answer: They have been delocalized.

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83. What is the bandgap of silicon?

1.12 eV

1.41 eV

2.83 eV

0.79 eV

Answer

Correct Answer: 1.12 eV

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84. What is the term for a semiconductor device manufacturing plant?

Fab

Chip shop

Semiconductor production facility (SPF)

Platter plant

Answer

Correct Answer: Fab

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85. Which type of element is most widely used for the manufacture of semiconductor devices?

Group IV

Group V

Group III

Group VI

Answer

Correct Answer: Group IV

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86. What is the value of kT at room temperature?

1.12 eV

25.6 meV

15 eV

137 meV

Answer

Correct Answer: 25.6 meV

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87. What are the four elements in CIGS?

Copper, indium, gallium, selenium

Cadmium, indium, germanium, sulphur

Copper, indium, gallium, silver

Carbon, iodine, germanium, sulphur

Answer

Correct Answer: Copper, indium, gallium, selenium

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88. What is the maximum theoretical efficiency for a single-junction silicon solar cell?

17%

33%

52%

21%

Answer

Correct Answer: 33%

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89. What devices are typically used to control volume in electronics?

Transistors

Inductors

Diodes

Resistors

Answer

Correct Answer: Resistors

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90. On a circuit board what letter usually marks a transistor?

Answer

Correct Answer: Q

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91. In ellipsometry, the azimuth is the angle between the _______ and the plane of incidence.

semi-minor axis of the ellipse

major axis of the ellipse

major chord

minor axis of the ellipse

Answer

Correct Answer: major axis of the ellipse

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92. What technique is commonly used to pattern semiconductors?

Photolithography

Chemical Vapor Deposition (CVD)

MEMS

Sputtering

Answer

Correct Answer: Photolithography

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93. Which concept describes the chemical potential of a semiconductor?

Fermi energy

Dirac statistics

Fermi level

Fermion level

Answer

Correct Answer: Fermi level

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94. The electron-volt is a unit of:

Potential

Energy

Conductivity

Power

Answer

Correct Answer: Energy

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95. The wavelength of light emitted by an LED is determined by its:

bandgap

phonon frequency

electron effective mass

permittivity

Answer

Correct Answer: bandgap

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96. What is an exciton?

A photon-phonon pair

An electron-hole pair

A magnetic monopole

A bandgap resonance

Answer

Correct Answer: An electron-hole pair

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97. Where must doping be added within a semiconductor to alter their conductivity?

Their crystal lattice.

Their outside.

Their center.

Their layers.

Answer

Correct Answer: Their crystal lattice.

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98. Which of the following is a voltage controlled device?

BJT

SCR

TRIAC

MOSFET

Answer

Correct Answer: MOSFET

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99. What three primary types of carrier action occur inside a semiconductor?

Drift, Diffusion, Recombination-Generation

Recombination-Generation, Dissension, Diffusion

Dissension, Drift, Recombination-Generation

Drift, Diffusion, Dissension

Answer

Correct Answer: Drift, Diffusion, Recombination-Generation

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100. The process by which electrons and holes annihilate is called:

Tunneling

Spontaneous emission

Initialization

Recombination

Answer

Correct Answer: Recombination

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101. Which two formulas determine the carrier distribution of a semiconductor?

Fermi-Dirac distribution & density of states

Ohm's law & Kirchhoff's current law

Riemann zeta function & Fourier transform

Bose-Einstein distribution & Bessel functions

Answer

Correct Answer: Fermi-Dirac distribution & density of states

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102. What type of semiconductor do you get if you dope it with boron?

An n-type semiconductor.

A boronic transistor.

A boric reaction transistor.

A p-type semiconductor.

Answer

Correct Answer: A p-type semiconductor.

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103. What is a III-V semiconductor?

A semiconductor made of three parts of one element to five parts of another element

A semiconductor made from elements in columns III and V of the periodic table

A semiconductor with conduction bands at 3 eV and 5 eV

Answer

Correct Answer: A semiconductor made from elements in columns III and V of the periodic table

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104. An electron is a _____

fermion

boson

Answer

Correct Answer: fermion

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105. What are semiconductors made out of primarily?

Salt.

Silicon.

Glass.

Rubber.

Answer

Correct Answer: Silicon.

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106. What does BJT stand for?

Bimetallic Jennings transistor

Back justified transistor

Boron joint transistor

Bipolar junction transistor

Answer

Correct Answer: Bipolar junction transistor

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107. When infusing impurities into silicon to make a semiconductor, what is this process called?

Melting.

Cracking.

Doping.

Conducting.

Answer

Correct Answer: Doping.

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108. The process of deliberately adding impurities to affect conductivity is called:

Fabrication

Insertion

Photolithography

Doping

Answer

Correct Answer: Doping

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109. What are the components of a MOSFET?

Source, drain, and gate

Voltage, current, and resistivity

Emitter, collector, and base

Dopant, acceptor, and donor

Answer

Correct Answer: Source, drain, and gate

Note: This Question is unanswered, help us to find answer for this one

110. Why are semiconductors important?

They are not important.

They are large and durable.

They successfully replaced vacuum tubes as the primary way to compute data.

They replaced silicon.

Answer

Correct Answer: They successfully replaced vacuum tubes as the primary way to compute data.

Note: This Question is unanswered, help us to find answer for this one

111. Which of the following is a type of transistor?

PSET

MTT

NRT

BJT

Answer

Correct Answer: BJT

Note: This Question is unanswered, help us to find answer for this one

112. What is a common scheme of electrical polarity in a MOSFET transistor?

N-n-n, and p-n-p.

N-p-r, u-p-n

n-p-n, and p-n-p.

n-p-n, and p-n-n-p.

Answer

Correct Answer: n-p-n, and p-n-p.

Note: This Question is unanswered, help us to find answer for this one

113. What is a semiconductor?

Half a conductor.

A conductor that doesn't work very well.

The combination of a conductive material, and an insulator.

Two halves of a conductor.

Answer

Correct Answer: The combination of a conductive material, and an insulator.

Note: This Question is unanswered, help us to find answer for this one

114. What are the two bands in which an electron can reside?

Resistive and conductive

Gamma and delta

Photon and phonon

Valence and conduction

Answer

Correct Answer: Valence and conduction

Note: This Question is unanswered, help us to find answer for this one

115. What is the reason for reducing drain doping in a metal-oxide semiconductor device design?

To increase line focus

To improve breakdown voltage

To reduce step response time

To reduce the buildup of calcium carbonate

Answer

Correct Answer: To improve breakdown voltage

Note: This Question is unanswered, help us to find answer for this one

116. What are the four terminals of an FET transistor?

Source, gate, signal, and body.

Sand, gate, drain, and body.

Source, NOR, AND, and OR.

Source, gate, drain, and body.

Answer

Correct Answer: Source, gate, drain, and body.

Note: This Question is unanswered, help us to find answer for this one

117. What law predicts the future of integrated circuits?

Miller's

Marleau's

Moore's

Marchand's

Answer

Correct Answer: Moore's

Note: This Question is unanswered, help us to find answer for this one

118. At which frequency, capacitive reactance equals to inductive reactance?

cut off frequency

Matching Frequency

Resonant Frequency

Tunning Frequency

Answer

Correct Answer: Resonant Frequency

Note: This Question is unanswered, help us to find answer for this one

119. What are the two basic types of impurities used in semiconductor doping?

N-Type & P-Type

Schottky & De Forest

Left-handed & Right-handed

Intrinsic & Extrinsic

Answer

Correct Answer: N-Type & P-Type

Note: This Question is unanswered, help us to find answer for this one

120. Can pure silicon alone be used to make a semiconductor?

Yes. All semiconductors are found in sand quarries.

No. It needs impurities to become semi-conductive.

Yes.

Yes. The purer, the better.

Answer

Correct Answer: No. It needs impurities to become semi-conductive.

Note: This Question is unanswered, help us to find answer for this one

121. What does 'doping' do?

Changes a semiconductor's behavior

Duplicate the semiconductor

Oxygenate a semiconductor

Purifies a semiconductor

Answer

Correct Answer: Changes a semiconductor's behavior

Note: This Question is unanswered, help us to find answer for this one

122. When silicon has been doped, what does this mean?

It has been melted and stirred.

Impurities have been added to make it less conductive.

Impurities have been added that alter its electronic properties in a controllable way.

It has had all of its impurities removed.

Answer

Correct Answer: Impurities have been added that alter its electronic properties in a controllable way.

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123. Diodes and most photovoltaic cells contain which feature?

A p-n junction

An Early voltage

A metal-insulator-metal junction

A Hall effect junction

Answer

Correct Answer: A p-n junction

Note: This Question is unanswered, help us to find answer for this one

124. What mathematical formula most accurately predicts the Fermi level of a semiconductor?

Fermi-Dirac distribution

Maxwell-Boltzmann distribution

Bose-Einstein distribution

Answer

Correct Answer: Fermi-Dirac distribution

Note: This Question is unanswered, help us to find answer for this one

125. What is the only p-type dopant used in silicon device manufacturing?

Antimony

Phosphorus

Arsenic

Boron

Answer

Correct Answer: Boron

Note: This Question is unanswered, help us to find answer for this one

126. What do diodes do?

Open current flow for in all directions

Block current in one direction while letting current flow in another direction.

Close current flow in all directions

Answer

Correct Answer: Block current in one direction while letting current flow in another direction.

Note: This Question is unanswered, help us to find answer for this one

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Basic Semiconductors MCQ

1. When a transistor is driven to saturation, ideally, the Vce is _____.

2. Vacuum tubes are _____.

3. Which of the following is used to provide current in vacuum tubes?

4. Tuned amplifiers are used for the amplification of _____.

5. What would be the gain of a negative feedback amplifier with an internal gain A=100 and a feedback factor m=0.9?

6. Why is the control grid of a tube always held at negative potential W.R.T cathode.?

7. The relationship among bandwidth, resonant frequency and Q of a tuned circuit is _____.

8. The resonant circuit has ___________ impedance at the resonant frequency.

9. We have to match a 16-ohm speaker to an amplifier so that the effective load resistance is 10 KΩ. What should be the transformer turn ratio?

10. Which coupling does the final stage of a multistage amplifier use?

11. The output frequency of a half-wave rectifier is _____.

12. Which of the following parameters is a measure of a vacuum tube's amplification capability?

13. The V-I characteristics of a triac in the first and third quadrants are essentially identical to those of _______ in the first quadrant

14. When a transistor has to act as a switch, it must operate in _____.

15. The required gain of an amplifier for sustained oscillation in the wein bridge oscillator is _____.

16. The Q-factor of a parallel tuned circuit is given by _____.

17. The output characteristics of an FET closely resemble the plate characteristics of a________ valve.

18. Which one of the following is a non-feedback type oscillator?

19. Tuned amplifiers are generally operated as

20. The most commonly used semiconductor in solid state devices is _____.

21. Which of the following configurations of a transistor is preferred as an amplifier?

22. The overall gain of a multistage amplifier is 140. When negative feedback is applied, the gain is reduced to 17.5. The fraction of the output that is feedback to the input will be _____.

23. Which of the following multivibrators is a square wave oscillator?

24. Which one of the following is Shockley's equation?

25. Two identical germanium diodes are connected in series opposition. A 10V battery is impressed upon this series arrangement. What will be the voltage across each diode room temperature if the Zener breakdown voltage of each diode is 9.8V?

26. The range of LC oscillators is _____.

27. Which device has the highest input impedance?

28. The maximum value of AC voltage appearing across the secondary of a transformer in a bridge circuit using a vacuum tube is 400 v. The peak inverse voltage of the diode should be _____.

29. Which of the following conditions must a transistor fulfill to act as an amplifier?

30. Tuning is generally accomplished by varying _____.

31. The slope of the D.C load line of a transistor circuit having a collector load Rc is _____.

32. The stability factor of a biasing circuit is 10. What does it mean?

33. If the A.C input to a half-wave rectifier has an R.M.S valve of 400/√2 v, the peak inverse voltage will be _____.

34. The ideal value of the stability factor is _____.

35. A 3-ohm load is coupled to a transistor amplifier through a step-down transformer. If the D.C resistance of the primary winding is 300Ω and the output resistance of the amplifier is 3KΩ, what should be the turn ratio for the transfer of maximum power?

36. The complementary MOS(CMOS) uses _____.

37. An :FET is a _____.

38. An FET has ________ temperature co-efficient of resistance.

39. The input and output voltages of a CE transistor amplifier are _____.

40. If in a transistor VCB= 4V , VBE = 0.7V, the VCE will be equal to _____.

41. Hartley oscillator is _____.

42. An SCR combines the features of_____.

43. A D.C milliammeter connected to a half-wave rectifier supplying a maximum current of 10mA will read _____.

44. A transistor amplifier has 4v,2mA as the operating point. For faithful amplification, the collector current due to signal alone should not exceed _____.

45. The impedance of a parallel tuned circuit at resonance is _____.

46. A reversed biased P-N junction has a resistance of the order of _____.

47. For an R-C phase shift oscillator , the frequency of oscillation will be given as _____.

48. For faithful amplification, VBE must not fall below _____.

49. If the input to a differentiating circuit is a square wave, the output will be _____.

50. In an R-C phase shift oscillator, an R-C network is designed to introduce a phase shift of _____ .

51. If in a transistor , Ic = 9.5mA , Ie = 10mA , the value of α will be _____.

52. If the input to an integrating circuit is a square wave, the output will be _____.

53. If the collector supply voltage is 10v, the collector cut off voltage under D.C conditions will be _____.

54. The maximum efficiency of a full wave rectifier is _____.

55. In the d.c. equivalent circuit of a transistor amplifier , the capacitors are regarded as _____.

56. An SCR is a solid state equivalent of a _____.

57. At parallel resonance, a tuned circuit offers an impedance of _____.

58. A three-stage amplifier has a first-stage voltage gain of 100, a second stage voltage gain of 200 and a third stage gain of 400. The total voltage gain in db will be _____.

59. In the enhancement mode (MOSFET) , conductivity increases _____.

60. In the collector feedback biasing, β = 57 , RC = 1 kΩ , IB = 60µA and VCB = 4.5V. The value of the stability factor will be _____.

61. Radio frequencies have their range above _____.

62. A varactor diode can function as a variable capacitor with a________ forward bias.

63. If a circuit of full-wave centre-tapped rectifier with capacitor filter employs a load RL = 100Ω, and C = 1050µF and the frequency is 50HZ , what would be the ripple factor?

64. A vacuum tube conducts current _____.

65. An A.C supply of 230v is applied to a half wave rectifier circuit through a transformer of turn ratio 10:1. Its D.C voltage output will be _____.

66. A triac can pass a portion of _____.

67. If in a transistor IE = 10.5mA , IC = 10mA,the value of β will be _____.

68. For good stabilization of the operating point in a voltage divider bias, the current I, flowing through potential dividers R1 and R2, should be equal to or greater than _____. (IB-base current)

69. An FET has the following parameters IDSS = 32mA , VGS ( off ) = -8V , VGS = -4.5V. What will be the drain current?

70. If the reverse bias on the gate of an FET is increased , the width of the conducting channel will _____.

71. According to the Barkhausen criterion for oscillators_______.A – open loop gainβ – feed back factor

72. A P-type material is _____.

73. Which particle generally carries the most momentum?

74. What causes particles to diffuse from regions of higher concentration to regions of lower concentration?

75. What is the name of the regime in which transistors pass current?

76. Which statement is true about the Zener Effect?

77. True or False? Pure Si has a low electrical resistivity at room temperature

78. What is the conventional unit of volume in semiconductor engineering?

79. In a plot of carrier concentration versus temperature, which of these is NOT a distinct region?

71.
According to the Barkhausen criterion for oscillators_______.
A – open loop gain
β – feed back factor